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PD - 94879
IRL3502PbF
HEXFET(R) Power MOSFET
l l l l l
Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free
D
VDSS = 20V RDS(on) = 0.007
G S
Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
ID = 110A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 5.0V Continuous Drain Current, VGS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100s) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
110 67 420 140 1.1 10 14 390 64 14 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
0.89 62
Units
C/W
12/9/03
IRL3502PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 20 0.70 77
Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.008 VGS = 4.5V, ID = 64A 0.007 VGS = 7.0V, ID = 64A V VDS = VGS , ID = 250A S VDS = 10V, ID = 64A 25 VDS = 20V, V GS = 0V A 250 VDS = 10V, V GS = 0V, TJ = 150C 100 VGS = -10V nA -100 VGS = 10V 110 ID = 64A 27 nC VDS = 16V 39 VGS = 4.5V, See Fig. 6 VDD = 10V ID = 64A ns RG = 3.8, VGS = 4.5V RD = 0.15, Between lead, 4.5 6mm (0.25in.) nH G from package 7.5 and center of die contact 4700 VGS = 0V 1900 pF VDS = 15V 640 = 1.0MHz, See Fig. 5
Typ. 0.019 10 140 96 130
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 110 showing the A G integral reverse 420 S p-n junction diode. 1.3 V TJ = 25C, IS = 64A, VGS = 0V 87 130 ns TJ = 25C, IF = 64A 200 310 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable
Starting TJ = 25C, L = 190H
RG = 25, IAS = 64A.
ISD 64A, di/dt 86A/s, VDD V(BR)DSS,
TJ 150C
junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4
IRL3502PbF
1000
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP
1000
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP
100
2.25V
2.25V
10 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
10 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 C TJ = 150 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 110A
I D , Drain-to-Source Current (A)
1.5
100
1.0
0.5
10
V DS = 15V 20s PULSE WIDTH 2 3 4 5 6
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL3502PbF
8000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
15
ID = 64A VDS = 16V
C, Capacitance (pF)
6000
12
Ciss
4000
9
Coss
2000
6
Crss
0
3
1
10
100
0
VDS , Drain-to-Source Voltage (V)
0
40
80
120
160
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
100
TJ = 150 C
I D , Drain Current (A)
100
100us
TJ = 25 C
1ms
10 0.5
V GS = 0 V
1.0 1.5 2.0 2.5
10
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL3502PbF
120
800
LIMITED BY PACKAGE
100
EAS , Single Pulse Avalanche Energy (mJ)
TOP
600
BOTTOM
ID 29A 40A 64A
I D , Drain Current (A)
80
60
400
40
200
20
0
25
50
TC , Case Temperature ( C)
75
100
125
150
0
25
Starting TJ , Junction Temperature ( C)
50
75
100
125
150
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy Vs. Drain Current
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL3502PbF
RDS (on) Drain-to-Source On Resistance ( ) RDS (on) Drain-to-Source On Resistance ( )
0.014
0.010
0.012
0.008
0.010
0.008
I D = 64A
0.006
VGS = 4.5V
0.006
VGS = 7.0V
0.004 0 100 200 300
400
A
0.004 2.0 3.0 4.0 5.0 6.0 7.0 8.0
A
I D , Drain Current (A)
V GS , Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
IRL3502PbF
TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
Dimensions are shown in millimeters (inches)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN
LEAD ASSIGNMENTS
HEXFET
14.09 (.555) 13.47 (.530)
4- DRAIN
4.06 (.160) 3.55 (.140)
4- COLLECTOR
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03

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